Talks and Poster Presentations (with Proceedings-Entry):
D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
"Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Osaka, Japan;
2011-09-08
- 2011-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
(2011),
ISBN: 978-1-61284-418-3;
59
- 62.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/SISPAD.2011.6035049
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2011/CP2011_Osintsev_3.pdf
Created from the Publication Database of the Vienna University of Technology.