Talks and Poster Presentations (with Proceedings-Entry):
S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Osaka, Japan;
2011-09-08
- 2011-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
(2011),
ISBN: 978-1-61284-418-3;
123
- 126.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/SISPAD.2011.6035065
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2011/CP2011_Tyaginov_1.pdf
Created from the Publication Database of the Vienna University of Technology.