Publications in Scientific Journals:
J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken:
"On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs";
Microelectronic Engineering,
88
(2011),
7;
1388
- 1391.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.mee.2011.03.065
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2011/JB2011_Hehenberger_1.pdf
Created from the Publication Database of the Vienna University of Technology.