Publications in Scientific Journals:
G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel:
"Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs";
Microelectronics Reliability,
51
(2011),
1530
- 1534.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.microrel.2011.06.024
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2011/JB2011_Grasser_1.pdf
Created from the Publication Database of the Vienna University of Technology.