M. Stöger-Pollach, A. Steiger-Thirsfeld, S. Schwarz:
"Low voltage TEM for semiconductor analysis";
Journal of Physics: Conference Series, 326 (2011), S. 012027.

Kurzfassung englisch:
Valence electron energy loss spectrometry (VEELS) is more and more employed for the quantification of dielectric properties in semiconductor research. The improvement of the energy resolution of the thermo-ionic emitter (lanthanum-hexaboride) is obtained by decreasing the acceleration-to-Wehnelt voltage ratio and by inserting a smaller Wehnelt diaphragm. These modifications lead to an improved energy resolution of 0.25 eV full width at half maximum and 3.03 eV full width at thousandth maximum at 20 keV beam energy, which is pretty close to the one of a monochromated field emission gun. Beside the improved energy resolution we demonstrate the accuracy of low voltage VEELS in terms of band gap determination of AlxGa1−xAs, with x varying from zero to 0.58. The experimental results are compared with a well established semi-empirical model commonly used for the calculation of the properties of III-V semiconductors.

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