C. Henkel, S. Abermann, O. Bethge, G. Pozzovivo, P. Klang, M. Stöger-Pollach, E. Bertagnolli:
"Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dieelectrics";
Microelectronic Engineering, 88 (2011), 3; S. 262 - 267.

Kurzfassung englisch:
Schottky barrier SOI-MOSFETs incorporating a La2O3/ZrO2 high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 1011 eV−1 cm−2, a low subthreshold slope of 70-80 mV/decade, and an ION/IOFF current ratio greater than 2 × 106 are obtained.

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