Talks and Poster Presentations (with Proceedings-Entry):
J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, T. Grasser, J. Mitard, L. Ragnarsson, M. Cho, L. Witters, T. Chiarella, M. Togo, W. Wang, A. Hikavyy, R. Loo, N. Horiguchi, G. Groeseneken:
"Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias";
Talk: IEEE International Electron Devices Meeting (IEDM),
Washington DC, USA;
2011-12-05
- 2011-12-07; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)",
(2011),
ISBN: 978-1-4577-0505-2;
4 pages.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IEDM.2011.6131580
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2011/CP2011_Grasser_1.pdf
Created from the Publication Database of the Vienna University of Technology.