[Zurück]

C. Vogler, F. Bruckner, M. Fuger, B. Bergmair, T. Huber, J. Fidler, D. Süss:
"Three-dimensional magneto-resistive random access memory devices based on resonant spin-polarized alternating currents";
Journal of Applied Physics, 109 (2011), 123901; S. 1 - 4.

Selective switching of a magneto-resistive random access memory (MRAM) multilayer stack
is demonstrated using resonant spin-polarized alternating currents (AC) superimposed on
spin-polarized direct currents. Finite element micromagnetic simulations show that the use of
frequency triggered AC allows one to maximize the transferred spin transfer torque selectively in
order to merely reverse the magnetization of a single storage layer in a stack. Using layers with
different resonance frequencies, which are realized by altering the anisotropy constants, allows one
to address them by tuning the AC frequency. A rapid increase of the storage density of MRAM
devices is shown by using three-dimensional sandwich structures.

http://dx.doi.org/10.1063/1.3596813