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H. Husstedt, U. Ausserlechner, M. Kaltenbacher:
"In-situ measurement of curvature and mechanical stress of packaged silicon";
Vortrag: IEEE Sensors Conference, Waikoloa; 01.11.2010 - 04.11.2010; in: "IEEE Sensors 2010 Conference", IEEE, Hawaii (2010), ISBN: 978-1-4244-8170-5; S. 2563 - 2568.

This study demonstrates a technique to simultaneously measure stress and strain of a CMOS silicon die in a thin standard package. Exploiting the highly anisotropic magnetic sensitivity of integrated Hall plates, a magnetic field is applied to measure the orientation of the die surface. This is applicable in-situ with the die assembled in the package and the package integrated into a module without any mechanical modifications. The only requirements are a non-magnetic sensor package and module, and a test chip with an array of Hall elements on the die surface. Moreover, the piezo-Hall and piezoresistive effects afford measurements of mechanical stress. The combined knowledge of stress and strain allows for deeper insight into the mechanical behavior of plastic encapsulated packages.

http://dx.doi.org/10.1109/ICSENS.2010.5690142