Talks and Poster Presentations (with Proceedings-Entry):
S. Vitanov, J. Kuzmik, V. Palankovski:
"Normally-Off InAlN/GaN HEMTs with n++ GaN Cap Layer: A Simulation Study";
Talk: International Semiconductor Device Research Symposium (ISDRS),
Washington DC , USA;
12-07-2011
- 12-09-2011; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)",
(2011),
ISBN: 978-1-4577-1754-3;
2 pages.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/ISDRS.2011.6135161
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2011/CP2011_Vitanov_2.pdf
Created from the Publication Database of the Vienna University of Technology.