[Back]


Publications in Scientific Journals:

J. Hell, M. Chirtoc, C. Eisenmenger-Sittner, H. Hutter, N. Kornfeind, P. Kijamnajsuk, M. Kitzmantel, E. Neubauer, K. Zellhofer:
"Characterisation of sputter deposited niobium and boron interlayer in the copper-diamond system";
Surface & Coatings Technology, 208 (2012), 24 - 31.



English abstract:
In most metalmatrix composites (MMCs) interfaces are decisive but hard to manipulate. Especially copper-carbon composites can exhibit excellent mechanical and thermal properties only if the Cu/C interface is modified by an optimised interlayer. Due to the excellent thermal conductivity and mechanical stability of diamond this form of carbon is preferred as reinforcement in heat sink materials (copper-diamond composite) which are often subjected to severe thermal and mechanical loads.
In the present case niobium and boron interlayers of various thicknesses were deposited on diamond and vitreous carbon substrates by magnetron sputter deposition. After the coverage of all samples by a copper film, a part of the samples was subjected to heat treatment for 30 min at 800 °C under high vacuum (HV) to simulate the thermal conditions during the production of the composite material by uniaxial hot pressing. De-wetting during heat treatment leads to the formation of holes or humps in the Cu coating. This effect was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). A comparison of time-of-flight secondary ion mass spectroscopy (TOF SIMS) profiles of heat treated samples with those of as deposited ones showed the influence of interdiffusion during the heating process. Diffusion behaviour and chemical composition of the interface were also studied by cross sectional transmission electron microscopy (X-TEM) investigations using focused ion beam (FIB) cut samples. The thermal contact resistance (TCR) of the interface was calculated from results obtained from modulated infrared radiometry (IR). Thin interlayers suppressed de-wetting most effectively and consequently the TCR at the Cu-diamond interface was found to decrease. Therefore they are promising candidates for optimising the Cu-diamond interface.


"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.surfcoat.2012.07.068


Created from the Publication Database of the Vienna University of Technology.