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M. Hartmann, H. Ertl, J.W. Kolar:
"On the Tradeoff Between Input Current Quality and Efficiency of High Switching Frequency PWM Rectifiers";
IEEE Transactions on Power Electronics, 27 (2012), 7/8; S. 3137 - 3149.

Due to their basic physical properties, power
MOSFETs exhibit an output capacitance Coss that is dependent
on the drain-source voltage. This (nonlinear) parasitic capacitance
has to be charged at turn-off of the MOSFET by the drain-source
current in rectifier applications that yield input current distortions.
A detailed analysis shows that the nonlinear behavior of this capacitance
is even more pronounced for modern super junction MOSFET
devices.Whereas Coss increaseswith increasing chip area, the
on-state resistance of the MOSFET decreases accordingly. Hence,
a tradeoff between efficiency and input current distortions exists.
A detailed analysis of this effect considering different semiconductor
technologies is given in this study and a Pareto curve in the
eta-THDI space is drawn that clearly highlights this relationship. It
is further shown that the distortions can be reduced considerably
by the application of a proper feedforward control signal counteracting
the nonlinear switching delay due to Coss . The theoretical
considerations are verified by experimental results taken from 10kW
laboratory prototypes with the switching frequencies of 250kHz and 1 MHz.

http://publik.tuwien.ac.at/files/PubDat_214887.pdf