Publications in Scientific Journals:
G. Pobegen, T. Grasser:
"Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps";
Materials Science Forum,
740-742
(2013),
757
- 760.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.757
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2012/JB2013_Grasser_2.pdf
Created from the Publication Database of the Vienna University of Technology.