Publications in Scientific Journals:
J.-F. Mennemann, A. Jüngel, H. Kosina:
"Transient Schrödinger-Poisson Simulations of a High-Frequency Resonant Tunneling Diode Oscillator";
Journal of Computational Physics,
Transient simulations of a resonant tunneling diode oscillator are presented. The semiconductor
model for the diode consists of a set of time-dependent Schrödinger equations
coupled to the Poisson equation for the electric potential. The one-dimensional Schrödinger
equations are discretized by the finite-difference Crank-Nicolson scheme using
memory-type transparent boundary conditions which model the injection of electrons
from the reservoirs. This scheme is unconditionally stable and reflection-free at the boundary.
An efficient recursive algorithm due to Arnold, Ehrhardt, and Sofronov is used to
implement the transparent boundary conditions, enabling simulations which involve a
very large number of time steps. Special care has been taken to provide a discretization
of the boundary data which is completely compatible with the underlying finite-difference
scheme. The transient regime between two stationary states and the self-oscillatory
behavior of an oscillator circuit, containing a resonant tunneling diode, is simulated for
the first time.
Siehe englisches Abstract.
Schrödinger-Poisson system; tunneling diode
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
Electronic version of the publication:
Created from the Publication Database of the Vienna University of Technology.