Publications in Scientific Journals:
F. Hernandez-Ramirez, A. Tarancon, O. Casals, E. Pellicer, J. Rodriguez, A. Romano-Rodriquez, J. Morante, S. Barth, S. Mathur:
"Electrical Properties of Individual Tin Oxide Nanowires Contacted to Platinum Electrodes";
Physical Review B,
76
(2007),
8;
85429
- 85433.
English abstract:
A simple and useful experimental alternative to field-effect transistors for measuring electrical properties (free electron concentration nd, electrical mobility μ, and conductivity σ) in individual nanowires has been developed. A combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques. Current-voltage (I-V) plots of single nanowires measured in both two- and four-probe configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky barriers, arising from the metal-semiconductor-metal (M-S-M) junctions. Temperature-dependent I-V measurements revealed effective Schottky barrier heights up to ΦBE=0.4 eV.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1103/PhysRevE.76.085429
Created from the Publication Database of the Vienna University of Technology.