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C. Glacer, D. Tumpold, R. Rainer, A. Dehé:
"Capacitive out of plane large stroke MEMS structure";
Talk: PRIME 2013 9th Conference on Ph. D. Research in Microelectronics and Electronics, Villach; 2013-06-24 - 2013-06-27; in: "Conference Proceedings PRIME2013 9th Conference on Ph. D. Research in Microelectronics and Electronics", IEEE Operations Center, 445 Hoes Lane, NJ 08854, CFP13622-PRT (2013), ISBN: 978-1-4673-4580-4; 125 - 128.

This paper introduces a way to increase the air-gap of a capacitive MEMS sensor or actuator. Usually, a thicker
sacrificial layer composed of silicon dioxide is used to increase the
distance between two parallel plates. In our case, both poly-silicon
planes are being produced with a small gap filled with silicon
dioxide. Corrugation grooves lined with highly tensile silicon
nitride cause a stress induced displacement of the stator after
the release etch was done. We will present first results, gained
from FEM-simulations and fabricated wafers. An insight into the
optimization of the deflection profile and the mechanical stability
of the buckling electrode is discussed.