Talks and Poster Presentations (with Proceedings-Entry):
F. Schanovsky, O. Baumgartner, W. Gös, T. Grasser:
"A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Glasgow, Scotland, United Kingdom;
2013-09-03
- 2013-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
(2013),
ISBN: 978-1-4673-5733-3;
1
- 4.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/SISPAD.2013.6650559
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2013/CP2013_Schanovsky_1.pdf
Created from the Publication Database of the Vienna University of Technology.