Publications in Scientific Journals:
G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser:
"Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs";
Materials Science Forum,
778-780
(2014),
959
- 962.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.959
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2013/JB2014_Grasser_1.pdf
Created from the Publication Database of the Vienna University of Technology.