Talks and Poster Presentations (with Proceedings-Entry):

J. Sama, S. Barth, J. Prades, M. Seifner, O. Casals, I. Gracia, J. Santander, C. Calaza, L. Fonseca, C. Cane, A. Romano-Rodriquez:
"Localized Growth and In-Situ Functionalisation of Ge Nanowires for Advanced Low Power Gas Sensors";
Poster: 2013 MRS Fall Meeting & Exhibit, Boston; 12-01-2013 - 12-06-2013; in: "2013 MRS Fall Meeting - Abstract & Program Book", (2013).

English abstract:
The research efforts devoted to the development of advanced electronic devices based on nanowires are continuously increasing as a consequence of the beneficial properties of these nanomaterials, namely their high surface-to-volume ratio and well-controlled physical and chemical properties [1]. The fabrication of such materials has been addressed by multitude of research groups throughout the world and the number of publications and fabrication methods reported are huge.
One important barrier that hampers the incorporation of these materials into electronic and functional devices is the requirement, in most cases, of precise manipulation and positioning of the nanowires and this is not always possible or the process cannot be fulfilled with enough throughput. Sometimes alternative inventive methods need to be tested and developed. One of these methods has been recently presented by the authors [2] and has been demonstrated for different semiconducting nanowires. Its basic principle is the direct site-selective growth of nanowires, using the VLS process, on top of CMOS compatible micromembranes or microhotplates, that incorporate an integrated heater in order to provide the thermal energy necessary to synthesize the nanowires, as well as interdigitated electrodes to contact the nanowires. This approach has been demonstrated for two different nanowire materials, but the possibilities offered by this method are enormous.
In this work we present an extension of this method for the fabrication of Ge nanowires on top of microhotplates consisting in the additional in-situ functionalisation of the surface of the nanowires using amine-based chemistry [3]. This treatment has modified the surface of the nanowires, which are no longer covered by an uncontrolled GeOx layer but by a well known amine termination, allowing a better control of their surface.

Created from the Publication Database of the Vienna University of Technology.