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S. Barth:
"Growth Phenomena and Applications of Inorganic Semiconducting Nanowires";
Vortrag: Chemiedozententagung 2014, Paderborn, Deutschland; 10.03.2014 - 11.03.2014; in: "Chemiedozententagung 2014", (2014), S. 46.

In the recent past, anisotropic nanostructures have gained tremendous attention due to their vast number of applications, including electronics, sensing, energy harvesting, etc...[1] A high degree of experimental control over morphology, dimension, crystallographic phase and orientation has been achieved; however some fundamental issues, such as defect control and integration issues, are not sufficiently solved yet. The presented lecture will focus on SnO2 and Ge model systems, which are formed by a metal-supported growth strategy. The nanowires investigated are predominantly grown by CVD techniques using molecular sources. The choice of the metal seed offers unique opportunities to modify the structure and properties of the growing material.[2] However, high energy input to heat the entire substrate is usually required for an effective formation of highly crystalline nanowires. For a localized growth of high quality semiconducting nanowires we are using small heating elements such as micromembranes and microhotplates. Key features of such microsystems are extremely fast cooling and heating processes due to their low mass and low power consumption. The selectively heated elements allow a site-specific formation of nanowires while the growing nanowire bundles bridge the gap between a set of interdigital electrodes located on top of the heated membranes. This approach allows us to perform heating and measuring operations independently, which is mandatory for thermally supported devices such as gas sensors.[3] In summary, the talk will address growth phenomena, integration issues of inorganic nanowires and their performance in gas sensing applications.