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S. Barth, M. Seifner:
"Growth Phenomena of Inorganic Semiconducting Nanowires Using Solid Seeds";
Poster: 17. Vortragstagung für Anorganische Chemie der Wöhler-Vereinigung, Saarbrücken; 26.09.2014 - 29.09.2014; in: "17. Vortragstagung für Anorganische Chemie der Wöhler-Vereinigung - Tagungsband", (2014), S. 45.

A high degree of experimental control over morphology, dimension, crystallographic phase and orientation of one-dimensional nanostructures has been achieved to date; however some fundamental issues, such as defect control and Integration issues, are not sufficiently solved yet. The presented poster will focus on Ge and ln₂O₃ model Systems, which are formed by a metal-supported growth strategy. The choice of the metal seed offers unique opportunities to modify the structure and properties of the growing material. For instance, the transfer of crystallographic Information from a nanoparticle seed to a growing nanowire had not been described in literature. The formation of Ge and ln₂O₃ nanowires using molecular sources and solid metal growth promoters in a CVD process has been investigated. We could demonstrate that (i) defects from a nanoparticle seed can be transferred to a growing semiconductor nanowire and (ii) nanowires can be grown from solid seeds by a formerly not described seed orientation dependent growth mechanism for non-alloying metal/nanowire material combinations. The requirements for the possibility of an effective defect transfer are defined and the potential seed materials are mapped out. In addition, we will illustrate in this contribution the influence of solid growth seeds on the crystal quality and growth rate of these nanowires as well as the importance of the precursor source in investigations of the growth mechanisms governing the formation of such elongated crystals.