Zeitschriftenartikel:
M. Meinert, M. Geisler, J. Schmalhorst, U. Heinzmann, E. Arenholz, W. Hetaba, M. Stöger-Pollach, A. Hütten, G. Reiss:
"Experimental realization of a semiconducting full-Heusler compound: Fe2TiSi";
Physical Review B,
90
(2014),
S. 085127.
Kurzfassung englisch:
Single-phase films of the full-Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4 eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to residual off-stoichiometry. Density functional theory calculations of the electronic structure are in excellent agreement with electron energy loss, optical, and x-ray absorption experiments. Fe2TiSi may find applications as a thermoelectric material.
"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1103/PhysRevB.90.085127
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.