Talks and Poster Presentations (with Proceedings-Entry):
W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser:
"Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Yokohama, Japan (invited);
2014-09-09
- 2014-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
(2014),
ISBN: 978-1-4799-5285-4;
77
- 80.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/SISPAD.2014.6931567
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2014/CP2014_Goes_1.pdf
Created from the Publication Database of the Vienna University of Technology.