Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):
D. Dergez, A. Bittner, J. Schalko, U. Schmid:
"Low-stress and long-term stable a-SiNx:H films deposited by ICP- PECVD";
Poster: EUROSENSORS 2014 - 28th European Conference on Solid-State Transducers,
Brescia, I;
07.09.2014
- 10.09.2014; in: "Procedia Engineering",
Elsevier,
87
(2014),
ISSN: 1877-7058;
S. 100
- 103.
Kurzfassung deutsch:
Based on a systematic variation of the gas flow ratio of silane (SiH4) and nitrogen (N2), amorphous hydrogenated silicon nitride
(a-SiNx:H) thin films are synthesized with an inductively coupled plasma enhanced chemical vapour deposition (ICP-PECVD)
technique offering a low (< 50 MPa) film stress in combination with a negligible drift behaviour. Most recently, two dominating
regimes were identified, characterized by either high, but stable compressive stress or low stress, but with a strong drift
behaviour. A rapid change in chemical composition at the transition point promotes the oxidation of the layer in the latter case
causing the drift, and is confirmed by the corresponding change of the refractive index n, as well as FT-IR (Fourier-Transform
Infrared Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy) measurements.
Kurzfassung englisch:
Based on a systematic variation of the gas flow ratio of silane (SiH4) and nitrogen (N2), amorphous hydrogenated silicon nitride
(a-SiNx:H) thin films are synthesized with an inductively coupled plasma enhanced chemical vapour deposition (ICP-PECVD)
technique offering a low (< 50 MPa) film stress in combination with a negligible drift behaviour. Most recently, two dominating
regimes were identified, characterized by either high, but stable compressive stress or low stress, but with a strong drift
behaviour. A rapid change in chemical composition at the transition point promotes the oxidation of the layer in the latter case
causing the drift, and is confirmed by the corresponding change of the refractive index n, as well as FT-IR (Fourier-Transform
Infrared Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy) measurements.
Schlagworte:
ICP-PECVD; Silicon nitride; X-ray photoelectron spectroscopy; Infrared spectroscopy; Residual Stress
"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.proeng.2014.11.392
Zugeordnete Projekte:
Projektleitung Ulrich Schmid:
Mikrosystemtechnik Projektkonto Schmid
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.