Talks and Poster Presentations (with Proceedings-Entry):
D. Dergez, A. Bittner, J. Schalko, U. Schmid:
"Low-stress and long-term stable a-SiNx:H films deposited by ICP- PECVD";
Poster: EUROSENSORS 2014 - 28th European Conference on Solid-State Transducers,
Brescia, I;
09-07-2014
- 09-10-2014; in: "Procedia Engineering",
Elsevier,
87
(2014),
ISSN: 1877-7058;
100
- 103.
English abstract:
Based on a systematic variation of the gas flow ratio of silane (SiH4) and nitrogen (N2), amorphous hydrogenated silicon nitride
(a-SiNx:H) thin films are synthesized with an inductively coupled plasma enhanced chemical vapour deposition (ICP-PECVD)
technique offering a low (< 50 MPa) film stress in combination with a negligible drift behaviour. Most recently, two dominating
regimes were identified, characterized by either high, but stable compressive stress or low stress, but with a strong drift
behaviour. A rapid change in chemical composition at the transition point promotes the oxidation of the layer in the latter case
causing the drift, and is confirmed by the corresponding change of the refractive index n, as well as FT-IR (Fourier-Transform
Infrared Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy) measurements.
German abstract:
Based on a systematic variation of the gas flow ratio of silane (SiH4) and nitrogen (N2), amorphous hydrogenated silicon nitride
(a-SiNx:H) thin films are synthesized with an inductively coupled plasma enhanced chemical vapour deposition (ICP-PECVD)
technique offering a low (< 50 MPa) film stress in combination with a negligible drift behaviour. Most recently, two dominating
regimes were identified, characterized by either high, but stable compressive stress or low stress, but with a strong drift
behaviour. A rapid change in chemical composition at the transition point promotes the oxidation of the layer in the latter case
causing the drift, and is confirmed by the corresponding change of the refractive index n, as well as FT-IR (Fourier-Transform
Infrared Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy) measurements.
Keywords:
ICP-PECVD; Silicon nitride; X-ray photoelectron spectroscopy; Infrared spectroscopy; Residual Stress
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.proeng.2014.11.392
Related Projects:
Project Head Ulrich Schmid:
Mikrosystemtechnik Projektkonto Schmid
Created from the Publication Database of the Vienna University of Technology.