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T. Frischmuth, M. Schneider, Th. Grille, U. Schmid:
"Effect of Reactive Gas Flow Ratio on IC-PECVD Deposited a-SiC:H Thin Films";
Poster: EUROSENSORS 2014 - 28th European Conference on Solid-State Transducers, Brescia, I; 09-07-2014 - 09-10-2014; in: "Procedia Engineering", Elsevier, 87 (2014), ISSN: 1877-7058; 128 - 131.

Hydrogenated amorphous silicon carbide layers are deposited using an inductive-coupled plasma-enhanced chemical vapour
deposition process. The nominal thickness of the thin films is 300 nm and the chemical composition ranges from carbon rich to
pure Si films by varying the silane to methane ratio χ. The compressive residual stress of the Si-C compound exhibits a maximum
at χ = 0.45. The deposition rate and the refractive index increase linearly with increasing χ. Furthermore, Fourier transformed infra-
red spectroscopy shows a correlation of the Si-C vibration mode with the residual stress.

Hydrogenated amorphous silicon carbide layers are deposited using an inductive-coupled plasma-enhanced chemical vapour
deposition process. The nominal thickness of the thin films is 300 nm and the chemical composition ranges from carbon rich to
pure Si films by varying the silane to methane ratio χ. The compressive residual stress of the Si-C compound exhibits a maximum
at χ = 0.45. The deposition rate and the refractive index increase linearly with increasing χ. Furthermore, Fourier transformed infra-
red spectroscopy shows a correlation of the Si-C vibration mode with the residual stress.

Silicon carbide, residual stress, PECVD, MEMS, FTIR

http://dx.doi.org/10.1016/j.proeng.2014.11.543

Project Head Ulrich Schmid:
Herstellung, Charakterisierung von SiC Bauelementen