Zeitschriftenartikel:
O. Bethge, C. Zimmermann, B. Lutzer, S. Simsek, J. Smoliner, M. Stöger-Pollach, C. Henkel, E. Bertagnolli:
"Effective reduction of trap density at the Y203/Ge interface by rigorous high-temperature oxygen annealing";
Journal of Applied Physics,
116
(2014),
214111;
S. 214111-1
- 214111-7.
Kurzfassung englisch:
The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl)yttrium and H2O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 × 1011 eV−1 cm−2 were achieved by oxygen annealing at high temperatures (550 °C-600 °C). The good interface quality is most likely driven by the growth of interfacial GeO2 and thermally stabilizing yttrium germanate.
"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1063/1.4903533
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.