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Publications in Scientific Journals:

O. Bethge, C. Zimmermann, B. Lutzer, S. Simsek, J. Smoliner, M. Stöger-Pollach, C. Henkel, E. Bertagnolli:
"Effective reduction of trap density at the Y203/Ge interface by rigorous high-temperature oxygen annealing";
Journal of Applied Physics, 116 (2014), 214111; 214111-1 - 214111-7.



English abstract:
The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl)yttrium and H2O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 × 1011 eV−1 cm−2 were achieved by oxygen annealing at high temperatures (550 °C-600 °C). The good interface quality is most likely driven by the growth of interfacial GeO2 and thermally stabilizing yttrium germanate.


"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1063/1.4903533


Created from the Publication Database of the Vienna University of Technology.