Publications in Scientific Journals:
M. Capriotti, P. Lagger, C. Fleury, M. Oposich, O. Bethge, C. Ostermaier, G. Strasser, D. Pogany:
"Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states";
Journal of Applied Physics,
117
(2015),
024506;
024506-1
- 024506-7.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1063/1.4905945
Electronic version of the publication:
http://publik.tuwien.ac.at/files/PubDat_237562.pdf
Created from the Publication Database of the Vienna University of Technology.