Talks and Poster Presentations (with Proceedings-Entry):
P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices";
Talk: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Hong Kong, China;
2015-05-10
- 2015-05-14; in: "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)",
(2015),
ISBN: 978-1-4799-6259-4;
389
- 392.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/ISPSD.2015.7123471
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2014/CP2015_Sharma_2.pdf
Created from the Publication Database of the Vienna University of Technology.