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Zeitschriftenartikel:

A. Jüngel, C. Negulescu, P. Shpartko:
"Bounded weak solutions to a matrix drift-diffusion model for spin-coherent electron transport in semiconductors";
Mathematical Models & Methods in Applied Sciences, 25 (2015), S. 929 - 958.



Kurzfassung deutsch:
Siehe englisches Abstract.

Kurzfassung englisch:
The global-in-time existence and uniqueness of bounded weak solutions to a spinorial
matrix drift-diffusion model for semiconductors is proved. Developing the electron density
matrix in the Pauli basis, the coefficients (charge density and spin-vector density)
satisfy a parabolic 4 x 4 cross-diffusion system. The key idea of the existence proof is to
work with different variables: the spin-up and spin-down densities as well as the parallel
and perpendicular components of the spin-vector density with respect to the precession
vector. In these variables, the diffusion matrix becomes diagonal. The proofs of the L^\infty
estimates are based on Stampacchia truncation as well as Moser- and Alikakos-type
iteration arguments. The monotonicity of the entropy (or free energy) is also proved.
Numerical experiments in one-space dimension using a finite-volume discretization indicate
that the entropy decays exponentially fast to the equilibrium state.

Schlagworte:
Spinorial semiconductors; drift-diffusion


"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1142/S0218202515500232


Erstellt aus der Publikationsdatenbank der Technischen Universitšt Wien.