Talks and Poster Presentations (with Proceedings-Entry):
Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC),
Graz, Austria;
2015-09-14
- 2015-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)",
(2015),
ISBN: 978-1-4673-7133-9;
172
- 175.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/ESSDERC.2015.7324741
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2018/CP_Illarionov_2015.pdf
Created from the Publication Database of the Vienna University of Technology.