[Back]

L Stöber, J. Konrath, S. Krivec, F. Patocka, S. Schwarz, A. Bittner, M. Schneider, U. Schmid:
"Impact of sputter deposition parameters on molybdenum nitride thin film properties";
Journal of Micromechanics and Microengineering, 25 (2015), 7; 07400101 - 07400111.

Molybdenum and molybdenum nitride thin films are presented, which are deposited by
reactive dc magnetron sputtering. The influence of deposition parameters, especially the
amount of nitrogen during film synthesization, to mechanical and electrical properties
is investigated. The crystallographic phase and lattice constants are determined by x-ray
diffraction analyses. Further information on the microstructure as well as on the biaxial
film stress are gained from techniques such as transmission electron microscopy, scanning
electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature
coefficient of resistance are measured by the van der Pauw technique starting from room
temperature up to 300 °C. Independent of the investigated physical quantity, a dominant
dependence on the sputtering gas nitrogen content is observed compared to other deposition
parameters such as the plasma power or the sputtering gas pressure in the deposition
chamber.

Molybdenum and molybdenum nitride thin films are presented, which are deposited by
reactive dc magnetron sputtering. The influence of deposition parameters, especially the
amount of nitrogen during film synthesization, to mechanical and electrical properties
is investigated. The crystallographic phase and lattice constants are determined by x-ray
diffraction analyses. Further information on the microstructure as well as on the biaxial
film stress are gained from techniques such as transmission electron microscopy, scanning
electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature
coefficient of resistance are measured by the van der Pauw technique starting from room
temperature up to 300 °C. Independent of the investigated physical quantity, a dominant
dependence on the sputtering gas nitrogen content is observed compared to other deposition
parameters such as the plasma power or the sputtering gas pressure in the deposition
chamber.

molybdenum, molybdenum nitride, reactive sputter deposition, x-ray diffraction, transmission electron microscopy, film stress, film resistivity

http://dx.doi.org/10.1088/0960-1317/25/7/074001