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L Stöber, J. Konrath, V. Haberl, M. Schneider, U. Schmid:
"High Temperature Behaviour of Sputter Deposited Molybdenum Nitride Thin Films";
Poster: MME 2015 - 26th MicroMechanics Europe Workshop, Toledo, Spanien; 09-20-2015 - 09-23-2015; in: "MME 2015 - 26th MicroMechanics Europe Workshop", (2015).

In this paper the high temperature behavior of
molybdenum nitride (Mo2N) thin films is reported.
The films are synthesized from a pure Mo target by a
reactive dc magnetron sputter process in an argon
and nitrogen gas atmosphere. A sequence of Auger
and effusion measurements is utilized up to 1000°C to
investigate the amount and binding condition of the
nitrogen in the thin film. At a sputtering gas nitrogen
fraction of 40%, the Mo2N layer consists of nearly
38% nitrogen, of which 87% is incorporated on lattice
sites to form the cubic Mo2N phase. Another 13% is
incorporated on interstitial sites, which causes layer
stress and a distortion of the crystallite lattice.

In this paper the high temperature behavior of
molybdenum nitride (Mo2N) thin films is reported.
The films are synthesized from a pure Mo target by a
reactive dc magnetron sputter process in an argon
and nitrogen gas atmosphere. A sequence of Auger
and effusion measurements is utilized up to 1000°C to
investigate the amount and binding condition of the
nitrogen in the thin film. At a sputtering gas nitrogen
fraction of 40%, the Mo2N layer consists of nearly
38% nitrogen, of which 87% is incorporated on lattice
sites to form the cubic Mo2N phase. Another 13% is
incorporated on interstitial sites, which causes layer
stress and a distortion of the crystallite lattice.

Molybdenum, molybdenum nitride, reactive sputter deposition, effusion, Auger spectroscopy