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T. Frischmuth, D. Maurer, M. Schneider, Th. Grille, U. Schmid:
"IMPACT OF SUBSTRATE TEMPERATURE AND INDUCTIVELY COUPLED PLASMA POWER ON a-SiC:H THIN FILM PROPERTIES";
Vortrag: MME 2015 - 26th MicroMechanics Europe Workshop, Toledo, Spanien; 20.09.2015 - 23.09.2015; in: "MME 2015 - 26th MicroMechanics Europe Workshop", (2015).

In recent years, hydrogenated amorphous silicon carbide (a-SiC:H) with its high thermal stabil-ity and mechanical robustness has become a material of interest for high performance micro electrome-chanical systems. In this study, the impact of plasma power and substrate temperature of inductively cou-pled chemical vapor deposited a-SiC:H thin films is discussed. The changes of the refractive index and mechanical thin film parameters like residual stress and mass density are shown and its correlation with the chemical composition taken from Fourier trans-formed infrared spectra is explained. Measurements are linked with deposition kinetics, revealing an in-crease of compressive film stress as well as mass den-sity independent which of the two deposition parame-ter is increased. Refractive index on the other hand decreases with increasing plasma power, but in-creases at higher substrate temperatures.

In recent years, hydrogenated amorphous silicon carbide (a-SiC:H) with its high thermal stabil-ity and mechanical robustness has become a material of interest for high performance micro electrome-chanical systems. In this study, the impact of plasma power and substrate temperature of inductively cou-pled chemical vapor deposited a-SiC:H thin films is discussed. The changes of the refractive index and mechanical thin film parameters like residual stress and mass density are shown and its correlation with the chemical composition taken from Fourier trans-formed infrared spectra is explained. Measurements are linked with deposition kinetics, revealing an in-crease of compressive film stress as well as mass den-sity independent which of the two deposition parame-ter is increased. Refractive index on the other hand decreases with increasing plasma power, but in-creases at higher substrate temperatures.

Silicon carbide, CVD, inductively cou-pled, infrared spectroscopy, mass density, residual stress, refractive index