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L Stöber, M. Schneider, U. Schmid:
"Impact of Contact Material Deposition Technique on the Properties of Ti/4H-SiC Schottky Structures";
Poster: ICSCRM 2015 - 16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy; 10-04-2015 - 10-09-2015; in: "ICSCRM 2015 - 16th International Conference on Silicon Carbide and Related Materials", (2015), ISBN: 978-3-0357-1042-7; 569 - 572.

In this paper, we report on the performance of Ti/4H-SiC Schottky junctions, whereas the
contact material is either e-beam evaporated or magnetron sputter deposited. When applying the
first technique, the Schottky barrier height is lowered at room temperature by about 80 meV or by
about 160 meV extracted from current/voltage and capacitance/voltage measurements, respectively.
Furthermore, e-beam evaporation of the Ti contact results in an ideality factor closer to 1 when
comparing structures of the same design.

In this paper, we report on the performance of Ti/4H-SiC Schottky junctions, whereas the
contact material is either e-beam evaporated or magnetron sputter deposited. When applying the
first technique, the Schottky barrier height is lowered at room temperature by about 80 meV or by
about 160 meV extracted from current/voltage and capacitance/voltage measurements, respectively.
Furthermore, e-beam evaporation of the Ti contact results in an ideality factor closer to 1 when
comparing structures of the same design.

Schottky junction, barrier height, silicon carbide, titanium, sputter deposition, e-beam evaporation, I/V, C/V, Richardson model, Arrhenius plot