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T. Frischmuth, M. Schneider, D. Maurer, Th. Grille, U. Schmid:
"Impact of thermal treatment on the residual stress and Young´s modulus of thin a-SiC:H membranes applying bulge testing";
Talk: Eurosensors XXIX, Freiburg, D; 10-06-2015 - 10-09-2015; in: "Proceedings of Eurosensors XXIX", Procedia Engineering, Vol. 120 (2015), ISSN: 1877-7058; 752 - 755.

Silicon carbide (SiC) as a wide bandgap semiconductor features outstanding electrical and mechanical properties as well as
enhanced inertness against a large variety of chemical substances and a high temperature stability. Therefore, it is the material of
choice for high performance microelectromechanical systems. This study presents the impact of thermal treatment on a 500 nm
thin hydrogenated amorphous SiC membrane. Layers were synthesized using an inductively-coupled plasma-enhanced chemical
vapour deposition equipment and processed to obtain circular diaphragms. Bulge testing is performed with a uniformly applied
pressure load and the bending characteristics as well as the flexural Young´s modulus and residual tensile stress are determined.
With increasing annealing temperature a massive increase of membrane stress and only a slight increase of Young´s modulus
occurs while the bending characteristic of the diaphragm is a nearly perfect membrane type independent of thermal loading.

Silicon carbide (SiC) as a wide bandgap semiconductor features outstanding electrical and mechanical properties as well as
enhanced inertness against a large variety of chemical substances and a high temperature stability. Therefore, it is the material of
choice for high performance microelectromechanical systems. This study presents the impact of thermal treatment on a 500 nm
thin hydrogenated amorphous SiC membrane. Layers were synthesized using an inductively-coupled plasma-enhanced chemical
vapour deposition equipment and processed to obtain circular diaphragms. Bulge testing is performed with a uniformly applied
pressure load and the bending characteristics as well as the flexural Young´s modulus and residual tensile stress are determined.
With increasing annealing temperature a massive increase of membrane stress and only a slight increase of Young´s modulus
occurs while the bending characteristic of the diaphragm is a nearly perfect membrane type independent of thermal loading.

Silicon carbide, SiC, membrane, bulge testing, Young´s modulus, residual stress, stiffening