Talks and Poster Presentations (with Proceedings-Entry):
P.M. Mayrhofer, A. Bittner, U. Schmid:
"High Temperature Stability of ScxAl1-xN (x= 0.27) Thin Films";
Talk: Smart Sensors, Actuators and MEMS VII 2015,
Barcelona, Spain;
05-04-2015
- 05-06-2015; in: "Proc. of SPIE Vol. 9517-9520",
SPIE,
9517
(2015),
ISSN: 0277-786x;
Paper ID 95171C,
7 pages.
English abstract:
The stability of piezoelectric scandium aluminium nitride (ScxAl1-xN) thin films with x= 27% was investigated after post
deposition annealings up to 1000°C. The ScxAl1-xN thin films targeted for applications in micro-electromechanical
systems (MEMS) were deposited close to room-temperature applying DC magnetron sputtering. Varying deposition
parameters yielded films with different microstructural properties and piezoelectric constants. Upon annealing, the
crystalline quality of thin films with c-axis orientation increased, as found via characterization techniques such as X-ray
diffractometry and fourier transform infrared absorbance measurements. Additionally, piezoelectric constants after
annealing steps up to 1000°C are reported as obtained via a Berlincourt measurement principle. Furthermore,
modifications in chemical composition during temperature loads up to 1000°C were recorded by thermal effusion
measurements.
German abstract:
The stability of piezoelectric scandium aluminium nitride (ScxAl1-xN) thin films with x= 27% was investigated after post
deposition annealings up to 1000°C. The ScxAl1-xN thin films targeted for applications in micro-electromechanical
systems (MEMS) were deposited close to room-temperature applying DC magnetron sputtering. Varying deposition
parameters yielded films with different microstructural properties and piezoelectric constants. Upon annealing, the
crystalline quality of thin films with c-axis orientation increased, as found via characterization techniques such as X-ray
diffractometry and fourier transform infrared absorbance measurements. Additionally, piezoelectric constants after
annealing steps up to 1000°C are reported as obtained via a Berlincourt measurement principle. Furthermore,
modifications in chemical composition during temperature loads up to 1000°C were recorded by thermal effusion
measurements.
Keywords:
AlScN, annealing experiments, temperature stability, piezoelectric, d33, thermal effusion measurements
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1117/12.2178503
Created from the Publication Database of the Vienna University of Technology.