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N. Severino, N. Bednar, R. Mereu, S. Binetti, M. Acciarri, N. Gasparotto, N. Adamovic:
"lnfluence of Ga doping profile on electrical properties of flexible CIGS solar cell";
Poster: 31st European Photovoltaic Solar Energy Conference and Exhibition - EU PVSEC, Hamburg, Deutschland; 09-14-2015 - 09-18-2015; in: "31st European Photovoltaic Solar Energy Conference and Exhibition - EU PVSEC", (2015), 1345 - 1348.

In this work, we investigated. both numerically and experimentally, flexible Cu(In,Ga)Se2 (CIGS) thin
film solar cells grown using a hybrid sputtering/evaporation technique. In particular, the dependence of the solar cell
electrical properties on the amount of gallium (Ga) and its doping profile was observed. The correlation between the
Ga profile and the defects density inside thc absorber layer was analyzed in order to investigate the possibility to
enhance the performances ofthe developed device. The Ga concentration across the active layer was measured using
secondary ion mass spectroruetry (SIMS) and used as input for the simulations in order to understand and to propose
the best Ga profile tobe used to enhance solar cell efficiency.

In this work, we investigated. both numerically and experimentally, flexible Cu(In,Ga)Se2 (CIGS) thin
film solar cells grown using a hybrid sputtering/evaporation technique. In particular, the dependence of the solar cell
electrical properties on the amount of gallium (Ga) and its doping profile was observed. The correlation between the
Ga profile and the defects density inside thc absorber layer was analyzed in order to investigate the possibility to
enhance the performances ofthe developed device. The Ga concentration across the active layer was measured using
secondary ion mass spectroruetry (SIMS) and used as input for the simulations in order to understand and to propose
the best Ga profile tobe used to enhance solar cell efficiency.

CIGS, Defects, Doping, Flexible Substrate