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N. Severino, N. Bednar, N. Adamovic:
"Simulations studies to enhance the performances of flexible CIGS solar cells";
Poster: E-MRS Spring Meeting 2015, Lille, F; 05-11-2015 - 05-15-2015; in: "E-MRS Spring Meeting 2015", EMRS Strassburg, (2015), 48.

A numerical modelling of CIGS solar cells was carried out with the goal to understand the influence of
Ga concentration and doplng profile on the solar cell performance and thus to support the cell fabncatlon. Beside
this study. the effect of various defects Inside the absorber layer on the cell performance was analysed. Flexible
CIGS solar cells were deposited 011 polyimide substrate by an alternative approach: a hybrid sputteringievaporation
process (patent N°T02007A000648). In the devlce model, all relevant physlcal parameters were measured with
the goal to validate the numencal model. Tlle influence cf the Ga profile (based on SIMS measurements) on the
transport propert1es ot photo-generated carriers ancl thus device efficiency were numerically investlgated. In order
to enhance the accuracy of the model. other pararneters llke energy gap, electron affin lt)', dielectric constant and
traps dens1ty were varied in dependence on the Ga amount in the CIGS layer. Our study showed that the cell
performance 1s s1gnificantly more dependent on the detect denslty in the CIGS layer than on the double grading
prome of Ga within the absorber layer. Additionally. the results proved that detects states within the buffer layer
lnfluence more the Jsc tllan Voc values. The developed slmulatlon rnodels helped us to better understand the
dev1ce physlcs of CIGS solar cells and to improve the solar cell performance. particular1y ror a hybrid
sputteringlevaporatlon CIGS deposltlon process.

A numerical modelling of CIGS solar cells was carried out with the goal to understand the influence of
Ga concentration and doplng profile on the solar cell performance and thus to support the cell fabncatlon. Beside
this study. the effect of various defects Inside the absorber layer on the cell performance was analysed. Flexible
CIGS solar cells were deposited 011 polyimide substrate by an alternative approach: a hybrid sputteringievaporation
process (patent N°T02007A000648). In the devlce model, all relevant physlcal parameters were measured with
the goal to validate the numencal model. Tlle influence cf the Ga profile (based on SIMS measurements) on the
transport propert1es ot photo-generated carriers ancl thus device efficiency were numerically investlgated. In order
to enhance the accuracy of the model. other pararneters llke energy gap, electron affin lt)', dielectric constant and
traps dens1ty were varied in dependence on the Ga amount in the CIGS layer. Our study showed that the cell
performance 1s s1gnificantly more dependent on the detect denslty in the CIGS layer than on the double grading
prome of Ga within the absorber layer. Additionally. the results proved that detects states within the buffer layer
lnfluence more the Jsc tllan Voc values. The developed slmulatlon rnodels helped us to better understand the
dev1ce physlcs of CIGS solar cells and to improve the solar cell performance. particular1y ror a hybrid
sputteringlevaporatlon CIGS deposltlon process.