Contributions to Proceedings:
A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
"SOT-MRAM based on 1Transistor-1MTJ-Cell Structure";
in: "Proceedings of the Non-Volatile Memory Technology Symposium (NVMTS)",
IEEE,
2015,
50
- 53.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/NVMTS.2015.7457479
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2016/CP2015_Makarov_1.pdf
Created from the Publication Database of the Vienna University of Technology.