Talks and Poster Presentations (with Proceedings-Entry):
Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser:
"Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators";
Talk: IEEE International Reliability Physics Symposium (IRPS),
Pasadena, CA, USA;
04-17-2016
- 04-21-2016; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)",
(2016),
5A-1-1
- 5A-1-6.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IRPS.2016.7574543
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2016/CP2016_Illarionov_1.pdf
Created from the Publication Database of the Vienna University of Technology.