Talks and Poster Presentations (with Proceedings-Entry):
T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer:
"Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes";
Talk: IEEE International Electron Devices Meeting (IEDM),
Washington, DC, USA;
2015-12-07
- 2015-12-09; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)",
(2015),
535
- 538.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IEDM.2015.7409739
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2016/CP_2016_Grasser_1.pdf
Created from the Publication Database of the Vienna University of Technology.