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Publications in Scientific Journals:

G. Rescher, G. Pobegen, T. Grasser:
"Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress";
Materials Science Forum, 858 (2016), 481 - 484.



"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.481

Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2016/JB2016_grasser_1.pdf


Created from the Publication Database of the Vienna University of Technology.