Publications in Scientific Journals:
Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
"The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors";
2D Materials,
3
(2016),
3;
035004-1
- 035004-10.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1088/2053-1583/3/3/035004
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2016/JB2016_Illarionov_2.pdf
Created from the Publication Database of the Vienna University of Technology.