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P.M. Mayrhofer, C. Rehlendt, A. Bittner, M. Schneider, U. Schmid:
"Scandium Aluminium Nitride for MEMS Applications";
Talk: nanoFIS 2016 - 2nd International Conference on Functional integrated nano Systems, Graz; 06-27-2016 - 06-29-2016; in: "nanoFIS 2016 - 2nd International Conference on Functional integrated nano Systems", (2016).

Micro electromechanical systems
(MEMS) based on piezoelectric thin films is a
rapidly growing research field, from which
several successful product launches have been
achieved [1]. Despite the relatively low
piezoelectric coefficients, aluminum nitride (AIN)
is commonly used as active thin film material in
MEMS actuators and sensors due to its
compatibility with standard CMOS technologies.
Success stories are the integration of AIN into
acceleration sensors, into sensors to monitor
liquid properties like density and viscosity [2] as
weil as into energy harvesting devices [3]. ln
order to increase the potential of AIN based
MEMS by significantly increasing the
piezoelectric coefficients d33 and d31, the impact
of high scandium doping concentrations in the
ScxAI 1.xN material system was investigated.

Micro electromechanical systems
(MEMS) based on piezoelectric thin films is a
rapidly growing research field, from which
several successful product launches have been
achieved [1]. Despite the relatively low
piezoelectric coefficients, aluminum nitride (AIN)
is commonly used as active thin film material in
MEMS actuators and sensors due to its
compatibility with standard CMOS technologies.
Success stories are the integration of AIN into
acceleration sensors, into sensors to monitor
liquid properties like density and viscosity [2] as
weil as into energy harvesting devices [3]. ln
order to increase the potential of AIN based
MEMS by significantly increasing the
piezoelectric coefficients d33 and d31, the impact
of high scandium doping concentrations in the
ScxAI 1.xN material system was investigated.