Talks and Poster Presentations (with Proceedings-Entry):
V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Nürnberg, Deutschland;
2016-09-06
- 2016-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
(2016),
ISBN: 978-1-5090-0817-9;
233
- 236.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/SISPAD.2016.7605190
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2016/CP2016_Simonka_1.pdf
Created from the Publication Database of the Vienna University of Technology.