[Zurück]


Zeitschriftenartikel:

H. Hu, D. Binghai, H. Hu, F. Chen, M. Kong, Q. Zhang, T. Luo, L. Zhao, Z. Guo, J. Li, Z. Xu, S. Wang, D. Eder, L. Wan:
"Atomic Layer Deposition of TiO2 for a High-Efficiency Hole-Blocking Layer in Hole-Conductor-Free Perovskite Solar Cells Processed in Ambient Air";
ACS Applied Materials & Interfaces, 28 (2016), 8; S. 17999 - 18007.



Kurzfassung englisch:
"In this study we design and construct highefficiency, low-cost, highly stable, hole-conductor-free, solidstate
perovskite solar cells, with TiO2 as the electron transport layer (ETL) and carbon as the hole collection layer, in ambient air. First, uniform, pinhole-free TiO2 films of various thicknesses were deposited on fluorine-doped tin oxide (FTO) electrodes by atomic layer deposition (ALD) technology. Based on these TiO2 films, a series of holeconductor-free perovskite solar cells (PSCs) with carbon as the counter electrode were fabricated in ambient air, and the effect of thickness of TiO2 compact film on the device performance was investigated in detail. It was found that the performance of PSCs depends on the thickness of the compact layer due to the difference in surface roughness, transmittance, charge transport resistance, electron−hole recombination rate, and the charge lifetime. The best-performance devices based on optimized TiO2 compact film (by 2000 cycles ALD) can achieve power conversion efficiencies (PCEs) of as high as 7.82%. Furthermore, they can maintain over 96% of their initial PCE after 651 h (about 1 month) storage in ambient air, thus exhibiting excellent long-term stability."

Schlagworte:
atomic layer deposition hole-conductor-free perovskite solar cells hole-blocking layer carbon counter electrode long-term stability


"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1021/acsami.6b02701

Elektronische Version der Publikation:
http://publik.tuwien.ac.at/files/PubDat_251546.pdf


Erstellt aus der Publikationsdatenbank der Technischen Universitšt Wien.