Publications in Scientific Journals:
M. Capriotti, E. Bahat-Treidel, C. Fleury, O. Bethge, C. Ostermaier, M. Rigato, S. Lancaster, F. Brunner, H. Detz, O. Hilt, J. Würfl, D. Pogany, G. Strasser:
"Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors";
Solid-State Electronics,
125
(2016),
118
- 124.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.sse.2016.07.009
Electronic version of the publication:
http://publik.tuwien.ac.at/files/publik_252681.pdf
Created from the Publication Database of the Vienna University of Technology.