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M. Leitgeb, Ch. Zellner, M. Schneider, U. Schmid:
"A Combination of Metal Assisted Photochemical and Photoelectrochemical Etching for Tailored Porosification of 4H SiC Substrates";
ECS Journal of Solid State Science and Technology, 5 (2016), 10; S. 556 - 564.

Porous 4H-SiC layers were prepared with a tailored sequence of metal assisted photochemical etching (MAPCE) and photoelectrochemical
etching (PECE) steps. Porous layers resulting from MAPCE provided initiation sites for a subsequent PECE process.
Finally, the porosity of the porous layers was increased to the desired degree with a second MAPCE step. By applying this sequence,
the problem of skin and cap layer formation occurring during pure PECE is avoided. In addition, layers with a homogeneous porosity
depth profile are obtained, which is not possible when only pure PECE is applied.

Porous 4H-SiC layers were prepared with a tailored sequence of metal assisted photochemical etching (MAPCE) and photoelectrochemical
etching (PECE) steps. Porous layers resulting from MAPCE provided initiation sites for a subsequent PECE process.
Finally, the porosity of the porous layers was increased to the desired degree with a second MAPCE step. By applying this sequence,
the problem of skin and cap layer formation occurring during pure PECE is avoided. In addition, layers with a homogeneous porosity
depth profile are obtained, which is not possible when only pure PECE is applied.

http://dx.doi.org/10.1149/2.0041610jss